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SPECIFICATION
Device Name Type Name Spec. No.
: IGBT Module
(RoHS compliant product)
: 2MBI300U4J-120-50 :
MS5F 6857
May 24 '07
H.Kaneda
T.Miyasaka
May 24 '07 S.Miyashita K.Yamada
MS5F6857
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Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
May-24-'07
Enactment
S.Miyashita
K.Yamada T.Miyasaka
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2MBI300U4J-120-50(RoHS compliant product)
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
[Inverter] +
CX 1 T1
[Thermistor]
T2 G1.1 G 1.2 EX 1.2 G 1.3
GND
G2.1
G 2.2
G 2.3
Cu-Base
-
EX 2.2
Note : GND terminal current rating DC 1A max.
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3. Absolute Maximum Ratings ( at Tc= 25o C unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25oC Tc=80oC Tc=25oC Tc=80oC Conditions
1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (*1) Viso AC : 1min. 2500 VAC voltage between thermistor and others (*2) Mounting (*3) 3.5 Screw Terminals (*4) 4.5 Nm Torque PC-Board (*5) 0.6 (*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5) (*4) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6) (*5) Recommendable Value : PC-Board 0.4 to 0.6 Nm (M2.5)
Maximum Units Ratings 1200 V 20 V 450 300 900 A 600 300 600 1385 W +150 o C -40 to +125
4. Electrical characteristics ( at Tj= 25o C unless otherwise specified )
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R
o
Conditions VCE=1200V VGE=0V VCE=0V VGE=20V VCE=20V Ic=300mA Ic=300A VGE=15V
min. 4.5
o
Characteristics typ. max. 6.5 2.30 2.50 1.90 2.10 34 0.32 0.10 0.03 0.41 0.07 2.00 2.10 1.65 1.75 1.00 5000 495 3375 3.0 600 8.5 2.45 2.05 1.20 0.60 1.00 0.30 2.15 1.80 0.35 520 3450
Units mA nA V
Inverter
Input capacitance Turn-on time Turn-off time
Tj=25 C Tj=125oC Tj=25oC Tj=125oC VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=300A VGE=15V RG=2.0 IF=300A VGE=0V Tj=25oC Tj=125oC Tj=25oC Tj=125oC
Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*6)
Thermistor
IF=300A
465 3305
V nF
us
V us m K
T=25 C T=100oC B value B T=25/50oC (*6) Biggest internal terminal resistance among arm. Resistance
5. Thermal resistance characteristics
Items Thermal resistance(1device) Symbols Rth(j-c) IGBT FWD Conditions min. Characteristics typ. max. 0.09 0.15 Units
o
Contact Thermal resistance Rth(c-f) with Thermal Compound 0.0167 (1 device) (*7) (*7) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
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6.Indication on module
Display on the module label - Logo of production - Type name : 2MBI300U4J-120-50 - IC, VCES rating 300A 1200V - Lot No. (5 digits) - Place of manufacturing (code) - Bar code
7.Recommend way of mounting on Heat sink
(1) Initial : 1/3 specified torque, sequence (1)(2)(3)(4) (2) Final Full specified torque (3.5 Nm),sequence(4)(3)(2)(1)
(3)
(1)
Mounting holes Heat sink
(2)
(4)
Module
8.Recommend way of PCB mounting on the Module
(1) Initial : 1/3 specified torque, sequence (1)(2)(3)(4)(5) (2) Final Full specified torque (0.6 Nm),sequence(1)(2)(3)(4)(5)
(4)
(2)
Mounting holes PCB (Printed Circuit Board)
(1) (3) (5)
Module
M2.4 - M2.6 self tapping screw or M2.5 metrical screw is recommended. The screw length to be PCB thickness +8mm or less. Recommended tightening torque is 0.4 to 0.6 N m. Note: FR4 is suitable as PCB material. Nickel with a gold flash(Ni+Au) is recommended as surface metallization for spring landing pads. Tin(Sn) can also be used.
9. Applicable category
This specification is applied to IGBT-Module named 2MBI300U4J-120-50.
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10. Storage and transportation notes
* The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . * Store modules in a place with few temperature changes in order to avoid condensation on the module surface. * Avoid exposure to corrosive gases and dust. * Avoid excessive external force on the module. * Store modules with unprocessed terminals. * Do not drop or otherwise shock the modules when transporting. * Do not pull the springs when transporting and handling.
11. Definitions of switching time

90%
0V
L
0V VGE tr r Ir r
90%

VCE
V cc
Ic
90%
RG VGE
V CE Ic
0V 0A
tr ( i ) tr to n to f f

Ic
10%
10%
VCE tf
10%
12. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
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13. List of material () 7 14 13 6 2 8 9
3
1 4
16 5 15
17
No.
Parts
(Total weight of soldering material(typ) : 11.8 g) Material (main) Ref.
Cu Ni plating
1 Base Plate 2 Spring terminal 3 Cover 4 Case 5 Isolation substrate 6 IGBT chip 7 Wiring 8 Silicone Gel 9 Adhesive 10 Solder (Under chip) 11 Solder (Under Isolation substrate )
Phosphor Bronze Ag plating PPS resin PPS resin Al2O3 + Cu Silicon Aluminum Silicone resin Silicone resin Sn/Ag base Sn/Ag base Paper Silicon Fe Lead glass Cu Fe Ni plating Trivalent Chromate treatment Trivalent Chromate treatment (Not drawn in above) (Not drawn in above) (Not drawn in above) UL 94V-0 UL 94V-0
12 Label 13 FWD chip 14 Ring 15 Thermistor 16 Terminal 17 Nut
14. RoHS Directive Compliance (RoHS )
IGBTRoHSMS5F6209 (MS5F6212) The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition(MS5F6212) is made into a reference grade.
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15. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test methods and conditions : 40N : 101 sec. : 2.5 ~ 3.5 Nm (M5) 3.5 ~ 4.5 Nm (M6) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Screw torque : 0.4 ~ 0.6 Nm (M2.5) The number of times : 5 Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
(Aug.-2001 edition)
Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
Mechanical Tests
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
3 Vibration
5
(0:1)
4 Shock
Test Method 404 Condition code B
5
(0:1)
5 PCB mounting Strength 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Test Method 402 method Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5 5
(0:1) (0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(0:1)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Endurance Tests
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1205 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1205 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 C 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
o
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others
USLx1.2 Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 402 method Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
Mechanical Tests
1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 PCB Mounting Strength 1 High Temperature Storage 2 Low Temperature Storage
5 5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 0 0 0
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias Test Method 101
5 5 5 5
0 0 0 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
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Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 800 700 800 700 VGE=20V 15V 12V
Collector current vs. Collector-Emitter voltage (typ.) Tj=125oC / chip
Collector current : Ic [ A ]
Collector current : Ic [A ]
600 500 400
600 500 400 300 200 100 0
VGE=20V 15V
12V
10V 300 200 100 8V 0 0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5
10V
8V
0
1 2 3 4 Collector-Emitter voltage : VCE [ V ]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
800 700 10
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25oC / chip
Collector-Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
600 500 400 300 200 100 0 0
Tj=25oC Tj=125 C
o
8
6
4 Ic=600A Ic=300A Ic=150A
2
0 1 2 3 4 Collector-Emitter voltage : VCE [ V ] 5 5 10 15 20 Gate-Emitter voltage : VGE [ V ] 25
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25 C
1000.0
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=300A, Tj=25oC
100.0 Cies
Collector- Emitter voltage : VCE[ 200V/div ] Gate-Emitter voltage : VGE [ 5V/div ]
Capacitance : Cies, Coes, Cres [ nF ]
VGE
10.0 Cres 1.0 Coes
VCE 0 0 300 600 900 1200 1500 Gate charge : Qg [ nC ] 1800
0.1 0 10 20 Collector-Emitter voltage : VCE [ V ] 30
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=2.0, Tj=25oC 10000 10000
Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=2.0, Tj=125oC
Switching time : ton, tr, toff, tf [ nsec ]
1000 toff ton 100 tf tr
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
10 0 200 400 Collector current : Ic [ A ] 600
10 0 200 400 Collector current : Ic [ A ] 600
Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=15V, Tj=25oC 10000 60
Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, RG=2.0
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
50 Eoff(125oC) 40 30 20 10 0 0 100 200 300 400 Collector current : Ic [ A ] 500 600 Eoff(25oC) Err(125oC) Eon(125oC) Err(25oC) Eon(25oC)
ton 1000 toff tr
100 tf
10 0.1 1.0 10.0 Gate resistance : RG [ ] 100.0
Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=15V, Tj=125oC 60
Reverse bias safe operating area (max.) +VGE=15V, -VGE <= 15V, RG >= 2.0, Tj <= 125oC
Stray inductance <= 100nH
800
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
50 40 30 20 10 0 0.1 1.0 10.0 Gate resistance : RG [ ] 100.0 Err
Eon
Collector current : Ic [ A ]
Eoff
600
400
200
0 0 400 800 1200 Collector-Emitter voltage : VCE [ V ] 1600
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Forward current vs. Forward on voltage (typ.) chip 800 700 1000
Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, RG=2.0
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Irr(125oC) Irr(25oC) trr(125oC) 100 trr(25oC)
Forward current : IF [ A ]
600 500 400 300 200 100 0 0
Tj=25oC
Tj=125 C
o
10 1 2 3 Forward on voltage : VF [ V ] 4 0 200 400 Forward current : IF [ A ] 600
[ Thermistor ] Transient thermal resistance (max.) 1.000 100.0 Temperature characteristic (typ.)
Thermal resistance : Rth(j-c) [ oC/W ]
FWD 0.100 IGBT
Resistance : R [ k]
1.000
10.0
0.010
1.0
0.001 0.001
0.1 0.010 0.100 Pulse width : Pw [ sec ]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [ oC ]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used / stored in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity.
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Warnings
- Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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